Molecular Models for DSMC Simulations of Metal Vapor Deposition
نویسندگان
چکیده
The direct simulation Monte Carlo (DSMC) method is applied here to model the electron-beam (e-beam) physical vapor deposition of copper thin films. A suitable molecular model for copper-copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi-symmetric DSMC simulations for analysis of a typical e-beam metal deposition system with a cup crucible. The dimensional and nondimensional mass fluxes obtained are compared for two different deposition configurations with non-uniformity as high as 40 % predicted from the simulations.
منابع مشابه
Direct simulation Monte Carlo modeling of e-beam metal deposition
Three-dimensional direct simulation Monte Carlo ͑DSMC͒ method is applied here to model the electron-beam physical vapor deposition of copper thin films. Various molecular models for copper-copper interactions have been considered and a suitable molecular model has been determined based on comparisons of dimensional mass fluxes obtained from simulations and previous experiments. The variable hard ...
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